Publications

ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS  (2011)

Authors:
Rimmaudo, Ivan; Salavei, Andrei; Allodi, Valentina; Romeo, Alessandro; P., Zabierowski; T., Drobiazg; A., Bosio; N., Romeo; S., Mazzamuto; D., Menossi
Title:
ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS
Year:
2011
Type of item:
Contributo in atti di convegno
Tipologia ANVUR:
Contributo in Atti di convegno
Language:
Inglese
Format:
Elettronico
Congresso:
26th European Photovoltaic Solar Energy Conference and Exhibition
Place:
Hamburg, Germany
Period:
5-9, September, 2011
Publisher:
WIP-Renewable Energies
ISBN:
3936338272
Page numbers:
3040-3044
Keyword:
CdTe; Electrical Properties; Admittance Spectroscopy
Short description of contents:
In our laboratory CdTe solar cells are prepared by vacuum evaporation process (VE) with analternative activation treatment that avoids the use of CdCl2. This process consists of flowing chlorine containing gasnamely difluorochloromethane (Freon® R-22) and Argon into a quartz crystal tube at temperatures in the range of400-440°C and subsequent air annealing. The process substitutes the typical CdCl2 activation treatment, avoidingdeposition of CdCl2. Back contact is made by deposition of standard Cu/Au stacks. Different solar cells with Freonand CdCl2 treatment have been made and compared also with cells prepared by close space sublimation process(CSS) and Freon activation.Finished devices are analyzed by current-voltage and capacitance voltage at different temperatures, admittance anddrive level capacitance spectroscopy have been performed and the properties are correlated with the deposition andactivation parameters. Doping concentrations, defect densities, ideality factor and diode barrier height are calculatedaccording to the different deposition and post-deposition parameters.Measurements have shown a high density of deep defects of the low temperature deposited CdTe devices comparedto CSS deposited samples that result to have higher carrier concentration. Doping concentration of the CdTe and bandgap profiling is strictly depending on the above mentioned parameters.A preliminary analysis on the defect identification by admittance and deep level transient spectroscopy has beenperformed and discussion on the possible interpretation of deep defects presence and lack of shallow defects issuggested.
Note:
L'ultimo autore è da considerare A. Romeo, quelli successivi sono collaboratori appartenenti ad altri laboratori che hanno collaborato in parte.
Web page:
http://www.eupvsec-proceedings.com/proceedings?fulltext=Romeo&paper=11508
Product ID:
63419
Handle IRIS:
11562/370401
Deposited On:
July 11, 2012
Last Modified:
March 20, 2018
Bibliographic citation:
Rimmaudo, Ivan; Salavei, Andrei; Allodi, Valentina; Romeo, Alessandro; P., Zabierowski; T., Drobiazg; A., Bosio; N., Romeo; S., Mazzamuto; D., Menossi, ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS  in Proceedings of 26th European Photovoltaic Solar Energy Conference and ExhibitionWIP-Renewable EnergiesProceedings of "26th European Photovoltaic Solar Energy Conference and Exhibition" , Hamburg, Germany , 5-9, September, 2011 , 2011pp. 3040-3044

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ALPINE - Advanced Lasers for Photovoltaic INdustrial processing Enhancement Department Informatica Alessandro Romeo
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