The Physics of Integrated Devices (2016/2017)

Course code
4S00034
Name of lecturer
Alessandro Romeo
Coordinator
Alessandro Romeo
Number of ECTS credits allocated
6
Academic sector
FIS/01 - EXPERIMENTAL PHYSICS
Language of instruction
Italian
Location
VERONA
Period
I sem. dal Oct 3, 2016 al Jan 31, 2017.

Lesson timetable

I sem.
Day Time Type Place Note
Thursday 11:30 AM - 1:30 PM lesson Lecture Hall C from Oct 13, 2016  to Jan 31, 2017
Friday 2:30 PM - 4:30 PM lesson Lecture Hall G from Oct 14, 2016  to Jan 31, 2017

Learning outcomes

The course introduces the physical principles of operation of semiconductor devices and logic gates made by the planar integrated circuit technology.

The students will be able to analyze and evaluate the behavior of physical systems that realize a device or implement a logical pattern and will be able to compare the different systems in terms of the physical parameters that characterize their behavior.

Syllabus

In order to follow properly the lectures it is recommended to have already acquired knowledge on classical physics (laws of motion, work, energy, electric field, electric potential).

Covered topics:

Elements of Classical Physics and Atomic Physics: work and energy, electric field and potential, electric current, Ohm's law, linear circuits resistivity and temperature dependence in metals and semiconductors, the Bohr model, the periodic table of the elements

Crystal structure and electrical properties of metals, semiconductors and doped semiconductors: gas model of electrons in metals as a link model in semiconductors, concept of gap, doped semiconductors, nods to the band theory, conduction current and dissemination

P-n junction: non-polarized and polarized junction, ddp contact, voltage-current characteristic in forward and reverse bias, junction diode, Zener diode, OR / AND gates to diodes, switching times

Bipolar junction transistor BJT, input curves and in common emitter configuration output, common base, inverter, transfer rates characteristic and noise margins, switching times

Transitor in the field of JFET and MOSFET effect, manufacturing techniques, output and transfer curves, MOSFET and CMOS inverters, transfer characteristics, noise margins, switching times

Elementary digital circuits in MOS technology, CMOS, bipolar, ECL: NOR and NAND MOSFET and CMOS, NAND DTL, HTL, TTL, OR / NOR ECL

Comparison of logic families: propagation delay, power dissipation, fan-out, noise margins

Sensors and Applications

Assessment methods and criteria

The final test will be an oral exams on the topics covered in the lectures.

STUDENT MODULE EVALUATION - 2016/2017